Molecular Beam Epitaxy Growth and Optical Characterization of AlxIn1-xSb/GaAs Heterostructures

Komkov, O. S.; Firsov, D. D.; Pikhtin, A. N.; Semenov, A. N.; Meltser, B. Ya.; Solov'ev, V. A.; Ivanov, S. V.
December 2011
AIP Conference Proceedings;12/28/2011, Vol. 1416 Issue 1, p184
Academic Journal
Optical properties of AlxIn1-xSb semiconductor alloys with x varied in the range x = 0-0.52 were explored. The alloy layers were grown by molecular beam epitaxy on highly lattice-mismatched GaAs substrates, mediated by thick AlSb buffer layers and strained Insb/AlxIn1-xSb superlattices to reduce the extended defect density. Fourier-transform infrared spectroscopy was employed to characterize the alloys. Taking into account the conduction band non-parabolicity, the energy gap values (Eg) of the alloys were determined from the fundamental absorption edge. This enabled one to refine the bowing parameter of the Eg(x) dependence for AlxIn1-xSb alloys. It has been found to be of 0.32 eV, i.e. by 0.11 eV less than the generally referred value.


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