TITLE

Formation of nanosize structures on a silicon substrate by method of focused ion beams

AUTHOR(S)
Ageev, O.; Kolomiytsev, A.; Konoplev, B.
PUB. DATE
December 2011
SOURCE
Semiconductors;Dec2011, Vol. 45 Issue 13, p1709
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The results of experimental studies of modes in which nanosize structures are formed on a silicon substrate by method of focused ion beams are presented. Dependences of the diameter and depth of the nanosize structures on the ion beam current and time of exposure to the ion beam at a point are obtained. It is demonstrated that the main factor determining the rate of ion-beam milling is the ion beam current. The results of the study can be used in the development of technological processes for the fabrication of components for nanoelectronics and nanosystems engineering.
ACCESSION #
69969153

Tags: NANOSTRUCTURED materials;  SILICON;  FOCUSED ion beams;  MILLING (Metalwork);  MICROFABRICATION;  NANOELECTRONICS;  SUBSTRATES (Materials science)

 

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