TITLE

Oxygen-free precursor for chemical vapor deposition of gold films: thermal properties and decomposition mechanism

AUTHOR(S)
Turgambaeva, Asiya E.; Zharkova, Galina; Semyannikov, Petr; Krisyuk, Vladislav V.; Koretskaya, Tatyana; Trubin, Sergey; Kuchumov, Boris; Igumenov, Igor
PUB. DATE
September 2011
SOURCE
Gold Bulletin;2011, Vol. 44 Issue 3, p177
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Thermal properties of oxygen-, phosphorus-, and halogen-free dimethylgold(III) diethyldithiocarbamate complex (CH3)2AuS2CN(C2H5)2 (gold, dimethyl(diethylcarbamodithioato -S,S')-) having excellent storage stability and the mechanism of its decomposition to elemental gold were studied. Saturated vapor pressure was found to be ∼10-3- 10-1 Torr at 50-90°C. Decomposition of the vapor on the surface starts at T=210°C. The temperature dependence of gas phase composition was studied using the original mass spectrometric technique, it was established that the decomposition of the compound on the surface in vacuum follows three main pathways. Two of them result in the formation of elemental gold, saturated C2-C4 alkanes and (1) protonated ligand or (2) methylated ligand. The third one results in elemental gold and gaseous products: C2-C3 alkylmercaptanes and CH3SCN(C2H5)2. The formation of gold as a sole solid product within the temperature range 210-240°C was confirmed by X-ray photoelectron spectroscopy analysis. It was shown that the compound exhibits the best combination of volatility, thermal, and storage stability among volatile organogold complexes and thus it may be a promising precursor for obtaining gold films by chemical vapor deposition.
ACCESSION #
69616179

 

Related Articles

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics