TITLE

Chemical interaction between atomic-layer-deposited HfO[sub 2] thin films and the Si substrate

AUTHOR(S)
Cho, Moonju; Park, Jaehoo; Park, Hong Bae; Hwang, Cheol Seong; Jeong, Jaehack; Hyun, Kwang Soo
PUB. DATE
July 2002
SOURCE
Applied Physics Letters;7/8/2002, Vol. 81 Issue 2, p334
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
HfO[sub 2] thin films were deposited on Si wafers using an atomic layer deposition technique at temperatures ranging from 200 to 400 °C with HfC14 as the precursor and H[sub 2]O as the oxidant. The time-dependent interfacial-layer growth behavior was dependent on the deposition temperature. The interfacial layer grew with increasing deposition time at 200 °C. However, the film thicknesses decreased with increasing deposition time after reaching a certain maximum value at 300 and 400 °C due to the enhanced dissolution of SiO[sub χ] into the growing films at these temperatures. Post-annealing at 800 °C under a N[sub 2] atmosphere resulted in the precipitation of a Si-rich interfacial layer even for the initially interfacial layer free films. This had the effect of reducing the capacitance density of the films.
ACCESSION #
6885710

 

Related Articles

  • Two pseudobinary semiconducting silicides: RexMo1-xSi2 and CrxV1-xSi2. Long, Robert G.; Mahan, John E. // Applied Physics Letters;4/23/1990, Vol. 56 Issue 17, p1655 

    Two groups of thin-film samples were grown on silicon wafer substrates of compositions spanning the entire range of the ternary disilicides: RexMo1-xSi2 and CrxV1-xSi2. In each case, the lattice parameters vary smoothly with composition. The optical and electrical properties of the films suggest...

  • 2–10 nm scale plasma polymerized organic films. Senda, K.; Vinogradov, G. K.; Gorwadkar, S.; Morita, S. // Journal of Applied Physics;11/15/1993, Vol. 74 Issue 10, p6425 

    Describes the deposition of scale ultrathin hydrocarbon films on silicon wafers. Electronic applications of ultrathin organic films; Ways to prepare ultrathin organic films; Properties of the films.

  • Effect of Irradiation with Low-Energy Ar Ions on the Characteristics of the Working and Rear Sides of Single-Crystal GaAs Substrate. Alalykin, A. S.; Krylov, P. N.; Fedotova, I. V.; Fedotov, A. B. // Semiconductors;Apr2003, Vol. 37 Issue 4, p448 

    Contactless methods were used to study the characteristics of the front and rear sides of single-crystal GaAs wafers whose rear side was irradiated with low-energy Ar ions. Variations in the optical and photoelectric properties of irradiated and unirradiated sides were detected. A solitonic...

  • Large deformation and geometric instability of substrates with thin-film deposits. Finot, M.; Blech, I.A. // Journal of Applied Physics;4/15/1997, Vol. 81 Issue 8, p3457 

    Presents experimental and theoretical results on the evolution of large elastic deformation, non-uniform curvature, shape changes and geometric instability in substrates of silicon wafers with metal films. Finite element analysis; Curvature values' deviation from the Stoney predictions.

  • Nanowear/nanomechanical testing and the role of stress in sputtered CNx overcoats. Scharf, T.W.; Deng, H. // Journal of Applied Physics;4/17/1997, Vol. 81 Issue 8, p5393 

    Evaluates the hardness and elastic modulus of a:C-Nx films deposited on Si(111) wafers at ambient temperatures by reactive magnetron sputtering of C in a mixed Ar/N2 discharge. Increase in hardness and elastic moduli exhibited by nitrogenated films compared to the amorphous carbonated films.

  • Comparison of surface roughness of polished silicon wafers measured by light scattering.... Teichert, C.; MacKay, J.F. // Applied Physics Letters;5/1/1995, Vol. 66 Issue 18, p2346 

    Investigates the surface roughness of silicon wafers following different stages of chemomechanical polishing. Utilization of light scattering topograhy in the analysis; Derivation of the lateral correlation length and the roughness of the exponent; Influence of substrate surface finish on...

  • Fabrication of ultrathin metal oxide films using Langmuir-Blodgett deposition. Amm, D.T.; Johnson, D.J. // Applied Physics Letters;8/3/1992, Vol. 61 Issue 5, p522 

    Fabricates thin yttrium oxide (Y[sub 2]O[sub 3]) films using the Langmuir-Blodgett (LB) process. Deposition of yttrium oxide on silicon wafers; Effects of size on film microstructure; Potential application of LB deposition for fabrication of inorganic oxide film 0.1 to 40 nanometer thick.

  • Influence of a space charge region on charge carrier kinetics in silicon wafers. von Aichberger, S.; Abdallah, O.; Wu¨nsch, F.; Kunst, M. // Journal of Applied Physics;6/1/2002, Vol. 91 Issue 11, p9147 

    p-type Si wafers provided with silicon nitride films at the surface are investigated by contactless transient photoconductivity measurements. Comparing wafers of different resistivities and wafers at one side and at two sides provided with nitride films shows that separation and storage of...

  • Ultraviolet-infrared optical properties of highly (100)-oriented LaNiO[sub 3] thin films on Pt–Ti–SiO[sub 2]–Si wafer. Yu, J.; Sun, J. L.; Meng, X. J.; Huang, Z. M.; Chu, J. H.; Tang, D. Y.; Jin, C. Y.; Li, G.; Li, W. Y.; Liang, Q. // Journal of Applied Physics;9/15/2001, Vol. 90 Issue 6 

    The optical constants of highly (100)-oriented LaNiO[sub 3] thin films on Pt(111)-Ti–SiO[sub 2]–Si substrate derived by metalorganic deposition have been obtained using spectroscopic ellipsometry techniques in the wide wavelength range from ultraviolet to far infrared. In fitting...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics