Chemical interaction between atomic-layer-deposited HfO[sub 2] thin films and the Si substrate

Cho, Moonju; Park, Jaehoo; Park, Hong Bae; Hwang, Cheol Seong; Jeong, Jaehack; Hyun, Kwang Soo
July 2002
Applied Physics Letters;7/8/2002, Vol. 81 Issue 2, p334
Academic Journal
HfO[sub 2] thin films were deposited on Si wafers using an atomic layer deposition technique at temperatures ranging from 200 to 400 °C with HfC14 as the precursor and H[sub 2]O as the oxidant. The time-dependent interfacial-layer growth behavior was dependent on the deposition temperature. The interfacial layer grew with increasing deposition time at 200 °C. However, the film thicknesses decreased with increasing deposition time after reaching a certain maximum value at 300 and 400 °C due to the enhanced dissolution of SiO[sub χ] into the growing films at these temperatures. Post-annealing at 800 °C under a N[sub 2] atmosphere resulted in the precipitation of a Si-rich interfacial layer even for the initially interfacial layer free films. This had the effect of reducing the capacitance density of the films.


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