TITLE

Magnetoelectric coupling in Terfenol-D/polyvinylidenedifluoride composites

AUTHOR(S)
Mori, Kiyotake; Wuttig, Manfred
PUB. DATE
July 2002
SOURCE
Applied Physics Letters;7/1/2002, Vol. 81 Issue 1, p100
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The elastic coupling in the ferromagnetic/ferroelectric composite Terfenol-D/polyvinylidenefluoride (PVDF) leads to a magnetic field induced magnetoelectric (ME) effect: an applied magnetic field creates a piezomagnetic strain in the Terfenol-D that in turn induces a piezoelectric charge or voltage in the PVDF. This letter reports a ME. coefficient of 1.43 V/(cm Oe) in agreement with an analytical calculation based on the properties of the components. The ME coupling coefficient of this composite is 11%.
ACCESSION #
6869276

 

Related Articles

  • A strong ferroelectric ferromagnet created by means of spin-lattice coupling. Lee, June Hyuk; Lei Fang; Vlahos, Eftihia; Xianglin Ke; Young Woo Jung; Kourkoutis, Lena Fitting; Jong-Woo Kim; Ryan, Philip J.; Heeg, Tassilo; Roeckerath, Martin; Goian, Veronica; Bernhagen, Margitta; Uecker, Reinhard; Hammel, P. Chris; Rabe, Karin M.; Kamba, Stanislav; Schubert, Jürgen; Freeland, John W.; Muller, David A.; Fennie, Craig J. // Nature;8/4/2011, Vol. 476 Issue 7358, p114 

    An addendum for the article "A strong ferroelectric ferromagnet created by means of spin-lattice coupling," by June Hyuk Lee and colleagues in the 2010 issue is presented.

  • Diblock copolymer based self-assembled nanomagnetoelectric. Ren, Shenqiang; Briber, Robert M.; Wuttig, Manfred // Applied Physics Letters;10/27/2008, Vol. 93 Issue 17, p173507 

    A magnetoelectric (ME) composite with controlled nanostructures is synthesized using coassembly of two inorganic precursors with a block copolymer. This solution processed material consists of hexagonally arranged ferromagnetic cobalt ferrite [CoFe2O4 (CFO)] nano cylinders within a matrix of...

  • Theory of low-frequency magnetoelectric effects in ferromagnetic-ferroelectric layered composites. Bichurin, M. I.; Petrov, V. M.; Srinivasan, G. // Journal of Applied Physics;12/15/2002, Vol. 92 Issue 12, p7681 

    A theoretical model is presented for low-frequency magnetoelectric (ME) effects in bilayers of magnetostrictive and piezoelectric phases. An approach is proposed for the consideration of actual boundary conditions at the interface. An averaging method is used to estimate effective material...

  • Magnetoelectric and multiferroic properties of variously oriented epitaxial BiFeO3–CoFe2O4 nanostructured thin films. Yan, Li; Wang, Zhiguang; Xing, Zengping; Li, Jiefang; Viehland, D. // Journal of Applied Physics;Mar2010, Vol. 107 Issue 6, p064106 

    We report the ferroelectric, ferromagnetic, and magnetoelectric (ME) properties of self-assembled epitaxial BiFeO3–CoFe2O4 (BFO–CFO) nanostructure composite thin films deposited on (001), (110), and (111) SrTiO3 (STO) single crystal substrates. These various properties are shown to...

  • Hypertoroidal moment in complex dipolar structures. Prosandeev, S.; Bellaiche, L. // Journal of Materials Science;Oct2009, Vol. 44 Issue 19, p5235 

    The very recent use of atomistic simulations to investigate low-dimensional ferroelectrics and ferromagnets has led to the discovery of a new order parameter that is associated with the formation and evolution of many complex dipolar structures (such as onion and flower states or double...

  • Three-terminal gated magnetoelectronic device. Zelakiewicz, S.; Johnson, Mark // Applied Physics Letters;4/29/2002, Vol. 80 Issue 17, p3204 

    In a Hybrid Hall device, magnetic fringe fields from the edge of a single, patterned ferromagnetic film generate a Hall voltage in a two-dimensional electron gas. By adding an electrostatic gate to this passive device and applying an electric field, we demonstrate the reduction of the carrier...

  • Using antiferromagnetic/ferromagnetic bilayers as detection layers in magnetic tunnel junctions. Malinowski, G.; Hehn, M.; Sajieddine, M.; Montaigne, F.; Jouguelet, F.; Canet, F.; Alnot, M.; Lacour, D.; Schuhl, A. // Applied Physics Letters;11/24/2003, Vol. 83 Issue 21, p4372 

    It is shown that the association of an antiferromagnetic material with a ferromagnetic material in an exchange-coupled bilayer, often used in spintronic devices as a magnetic reference or pinned system, can be used as a detection layer in magnetoresistive sensors. The magnetic response is shown...

  • Modeling of ferromagnetic semiconductor devices for spintronics. Lebedeva, N.; Kuivalainen, P. // Journal of Applied Physics;6/15/2003, Vol. 93 Issue 12, p9845 

    We develop physical models for magnetic semiconductor devices, where a part of the device structure consists of a ferromagnetic semiconductor layer. First we calculate the effect of the exchange interaction between the charge carrier spins and the spins of the localized magnetic electrons on the...

  • CORRIGENDUM: Room temperature electrical spin injection into GaAs by an oxide spin injector.  // Scientific Reports;10/17/2014, p1 

    A correction to the article "Room temperature electrical spin injection into GaAs by an oxide spin injector" that was published in the July 7, 2014 issue is presented.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics