Suppression of phase segregation during molecular-beam epitaxial growth of GaMnN using nitrogen–hydrogen plasma

Cui, Y.; Li, L.
June 2002
Applied Physics Letters;6/3/2002, Vol. 80 Issue 22, p4139
Academic Journal
Epitaxial growth of GaMnN by electron-cyclotron-resonance plasma-assisted molecular-beam epitaxy using nitrogen-hydrogen plasma was studied by reflection high-energy electron diffraction, scanning electron microscopy, energy dispersive spectroscopy, and x-ray diffraction. The electron diffraction pattern changed from streaky to spotty when hydrogen was added to the nitrogen plasma, indicating that the effective group V/III ratio was increased. Films grown with nitrogen plasma are phase segregated into GaN and manganese nitrides. In contrast, when nitrogen-hydrogen plasma was used, the films are single phase Ga[sub 1-χMn[sub χN, and χ can be as high as 0.06. These results indicate that phase segregation can be suppressed by adding hydrogen to the nitrogen plasma during growth.


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