TITLE

Epitaxial growth of yttria-stabilised zirconia buffer layers on X-cut LiNbO[sub 3] for superconducting electrodes

AUTHOR(S)
Sánchez, F.; García-Cuenca, M.V.; Ferrater, C.; Varela, M.
PUB. DATE
September 2002
SOURCE
Applied Physics A: Materials Science & Processing;2002, Vol. 75 Issue 3, p381
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on the epitaxial growth of yttria-stabilised zirconia (YSZ) buffer layers on X-cut LiNbO[sub 3] (LNO) single crystals by pulsed laser deposition. Despite the low chemical stability of the substrates at high temperature, high quality fully reproducible films were obtained over a relatively broad range of processing conditions. The films were (00h) out-of-plane single oriented and the in-plane edge of the YSZ unit cell was aligned with the polar axis of the LNO. However, the YSZ deposition also promoted the formation of the compound LiNb[sub 3] O[sub 8] . This compound is epitaxial and located at the interface. The homogeneous YSZ film presents a uniform surface, free of outgrowths and with a low roughness. These characteristics are suitable for the epitaxial growth of other oxides, as has been demonstrated with the preparation of YBa[sub 2] Cu[sub 3] O[sub 7] /CeO[sub 2] /YSZ/LNO heterostructures. The superconducting YBa[sub 2] Cu[sub 3] O[sub 7] films were epitaxial, with the c axis perpendicular to the surface and single in-plane orientation, and presented good transport properties (critical temperatures around 86 K and critical current densities close to 10[sup 6] A/cm[sup 2] at 77 K).
ACCESSION #
6688370

 

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