Diffuse interface electron scattering in epitaxial Co/Cu bilayers

Keavney, David J.; Park, Sungkyun; Falco, Charles M.
May 2002
Journal of Applied Physics;5/15/2002 Part 1, 2 & 3, Vol. 91 Issue 10, p8108
Academic Journal
We have examined the origin of diffuse electron scattering at Co / Cu interfaces using in situ resistance measurements and scanning tunneling microscopy (STM) on a model system consisting of epitaxial (111)-oriented Co on Cu and Cu on Co. We grew epitaxial Co/Cu bilayers on 40 Ã… Cu(111)/Si(111) substrates, and monitored the resistance and surface morphology during the initial stages of growth for both Co on Cu and Cu on Co. For the case of Co on Cu, the resistance initially increases by 10% at submonolayer coverage, and then drops after 1-1.5 ML coverage. In situ STM topographs taken at similar stages of growth reveal that 20-30 Ã… Co islands initially nucleate above Cu step edges at submonolayer coverage and then grow inward to cover the Cu terraces. These islands introduce new steps at the surface, dramatically reduce the lateral correlation length of the surface profile, and consequently increase its contribution to the surface scattering resistance. We find that the nucleation and percolation of these islands is strongly correlated with the resistance behavior. In contrast, for Cu deposited on Co, we observe no island nucleation, and no corresponding resistance increase.


Related Articles

  • Heteroepitaxial growth of InAs on Si: a new type of quantum dot. Cyrlin, G. E.; Petrov, V. N.; Dubrovskii, V. G.; Samsonenko, Yu. B.; Polyakov, N. K.; Golubok, A. O.; Masalov, S. A.; Komyak, N. I.; Ustinov, V. M.; Egorov, A. Yu.; Kovsh, A. R.; Maximov, M. V.; Tsatsul’nikov, A. F.; Volovik, B. V.; Zhukov, A. E.; Kop’ev, P. S.; Ledentsov, N. N.; Alferov, Zh. I.; Bimberg, D. // Semiconductors;Sep99, Vol. 33 Issue 9, p972 

    The mechanism for heteroepitaxial growth in the InAs/Si system is studied by reflection highenergy electron diffraction, scanning tunnelling microscopy, and photoluminescence. For certain growth conditions, InAs nanostructures are found to develop on the Si surface immediately during the growth...

  • Atomically flat aluminum-oxide barrier layers constituting magnetic tunnel junctions observed by in situ scanning tunneling microscopy. Mizuguchi, M.; Suzuki, Y.; Nagahama, T.; Yuasa, S. // Applied Physics Letters;10/24/2005, Vol. 87 Issue 17, p171909 

    Observation using in situ scanning tunneling microscopy of the layers constituting a magnetic tunnel junction with a naturally oxidized aluminum barrier layer revealed an extremely flat aluminum-oxide surface. It was clarified from line-scan images that the aluminum-oxide barrier layer has...

  • Epitaxial growth of ultrathin Si caps on Si(100):B surface studied by scanning tunneling microscopy. Zhang, Z.; Kulakov, M. A.; Bullemer, B.; Eisele, I.; Zotov, A. V. // Applied Physics Letters;7/22/1996, Vol. 69 Issue 4, p494 

    Epitaxial growth of extremely thin Si films (few monolayers) is studied by scanning tunneling microscopy. Using specific boron-induced surface features as an indication of the presence of boron on the surface, boron segregation to the surface is tested both in solid phase epitaxy and molecular...

  • A combined molecular-beam epitaxy and scanning tunneling microscopy system. Orr, B. G.; Snyder, C. W.; Johnson, M. // Review of Scientific Instruments;Jun91, Vol. 62 Issue 6, p1400 

    A combined molecular-beam epitaxy and scanning tunneling microscopy system has been constructed. The design has been optimized for the study of III-V semiconductors with the goal of examining the surface with both in situ scanning tunneling microscopy (STM) and reflection high-energy electron...

  • Epitaxial graphene on cubic SiC(111)/Si(111) substrate. Ouerghi, A.; Kahouli, A.; Lucot, D.; Portail, M.; Travers, L.; Gierak, J.; Penuelas, J.; Jegou, P.; Shukla, A.; Chassagne, T.; Zielinski, M. // Applied Physics Letters;5/10/2010, Vol. 96 Issue 19, p191910 

    Epitaxial graphene films grown on silicon carbide (SiC) substrate by solid state graphitization is of great interest for electronic and optoelectronic applications. In this paper, we explore the properties of epitaxial graphene films on 3C-SiC(111)/Si(111) substrate. X-ray photoelectron...

  • Ultradense phosphorous delta layers grown into silicon from PH[sub 3] molecular precursors. Shen, T.-C.; Ji, J.-Y.; Zudov, M. A.; Du, R.-R.; Kline, J. S.; Tucker, J. R. // Applied Physics Letters;3/4/2002, Vol. 80 Issue 9, p1580 

    Phosphorous δ-doping layers were fabricated in silicon by PH[sub 3] deposition at room temperature, followed by low-temperature Si epitaxy. Scanning tunneling microscope images indicate large H coverage, and regions of c(2 x 2) structure. Hall data imply full carrier activation with mobility...

  • Adsorbate-induced one-dimensional long-range modulation of an epitaxial insulator film. Ernst, W.; Eichmann, M.; Pfnu¨r, H.; Jonas, K.-L.; von Oeynhausen, V.; Meiwes-Broer, K. H. // Applied Physics Letters;4/8/2002, Vol. 80 Issue 14, p2595 

    Using low-energy electron diffraction and scanning tunneling micrsocopy, we found that epitaxial NaCl films grown on Ge(100) with thicknesses up to (at least) 15 monolayers can be modulated with a period of six lattice constants and an amplitude directed mainly normal to their surface. The...

  • Chemical composition on the top of a surface determined with the evolution of surface states. Luh, Dah-An; Huang, Chih-Hao; Cheng, Cheng-Maw; Tsuei, Ku-Ding // Applied Physics Letters;5/6/2013, Vol. 102 Issue 18, p181601 

    The epitaxial growth of Cu on Ag(111) was explored on monitoring the evolution of its surface states with angle-resolved photoemission spectroscopy; the chemical element on the top of Cu islands on Ag(111) with a (9×9) reconstruction was determined to be not Cu but Ag. Our result...

  • An ultrahigh vacuum dual-tip scanning tunneling microscope operating at 4.2 K. Okamoto, Hiroshi; Chen, Dongmin // Review of Scientific Instruments;Dec2001, Vol. 72 Issue 12, p4398 

    The design and performance of an ultrahigh vacuum compatible cryogenic dual-tip scanning tunneling microscope is described. The microscope is attached at the bottom of a low-loss liquid helium Dewar and can be operated down to 4.2 K. The coarse positioning system consists of five linear steppers...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics