Thick, crack-free blue light-emitting diodes on Si(111) using low-temperature AlN interlayers and in situ Si[sub x]N[sub y] masking

Dadgar, A.; Poschenrieder, M.; Bla¨sing, J.; Fehse, K.; Diez, A.; Krost, A.
May 2002
Applied Physics Letters;5/20/2002, Vol. 80 Issue 20, p3670
Academic Journal
Thick, entirely crack-free GaN-based light-emitting diode structures on 2 in. Si(111) substrates were grown by metalorganic chemical-vapor deposition. The ∼2.8-µm-thick diode structure was grown using a low-temperature A1N:Si seed layer and two low-temperature A1N:Si interlayers for stress reduction. In current-voltage measurements, low turn-on voltages and a series resistance of 55 were observed for a vertically contacted diode. By in situ insertion of a Si[sub x]N[sub y] mask, the luminescence intensity is significantly enhanced. A light output power of 152 µW at a current of 20 mA and a wavelength of 455 nm is achieved.


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