TITLE

High-power 400-nm-band AlGaInN-based laser diodes with low aspect ratio

AUTHOR(S)
Asano, T.; Takeya, M.; Tojyo, T.; Mizuno, T.; Ikeda, S.; Shibuya, K.; Hino, T.; Uchida, S.; Ikeda, M.
PUB. DATE
May 2002
SOURCE
Applied Physics Letters;5/13/2002, Vol. 80 Issue 19, p3497
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
High-power blue-violet laser diodes with aspect ratio as low as 2.3 and threshold current down to 33 mA have been realized. The relationship between threshold current and optical confinement factor was investigated in order to minimize the beam divergence angle perpendicular to the junction plane (θ[sub ⊥]). θ[sub ⊥] was found to decrease with reduction of the optical confinement factor, whereas threshold current density increased. A new layer structure, in which a p-typed cladding layer was located next to an AlGaN electron blocking layer, and a GaInN guiding layer was inserted between the active and the AlGaN electron blocking layer, was effective for obtaining small θ[sub ⊥] while maintaining low threshold current. © 2002 American Institute of Physics.
ACCESSION #
6630289

 

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