Far-infrared absorption in Sb-doped Ge epilayers near the metal–insulator transition

Bandaru, Jordana; Beeman, Jeffrey W.; Haller, Eugene E.
May 2002
Applied Physics Letters;5/13/2002, Vol. 80 Issue 19, p3536
Academic Journal
Epitaxial germanium layers doped near the metal–insulator transition were grown by liquid phase epitaxy from a Pb melt. Far-infrared absorption was measured between ∼20 cm-1 and 150 cm-1. Linear optical absorption coefficients were determined for Ge:Sb in the doping range of 9.0×10[sup 14] cm[sup -3]200 μm) in blocked impurity band detectors is discussed. © 2002 American Institute of Physics.


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