In-doped SrTiO[sub 3] ceramic thin films

Dai, Shouyu; Lu, Huibin; Chen, Fan; Chen, Zhenghao; Ren, Z. Y.; Ng, D. H. L.
May 2002
Applied Physics Letters;5/13/2002, Vol. 80 Issue 19, p3545
Academic Journal
We report the characterization of the ceramic SrIn[sub 0.1]Ti[sub 0.9]O[sub 3] thin film grown by laser molecular-beam epitaxy. The lattice constant is determined to be 0.3948 nm, slightly larger than that of the SrTiO[sub 3] substrate. Hall measurement confirms that this film is a p-type semiconductor either below 92 K or above 158 K. X-ray photoemission spectroscopy study shows that the width of the valence band of the p-type SrIn[sub 0.1]Ti[sub 0.9]O[sub 3] film is narrower than that of the n-type SrNb[sub 0.1]Ti[sub 0.9]O[sub 3] film. There is a 0.35 eV difference in the Fermi energy level of the two films. The electronic state of the surface layer of the SrIn[sub 0.1]Ti[sub 0.9]O[sub 3] film is found to be different from that of its interior. © 2002 American Institute of Physics.


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