Direct measurement of the polarization charge in AlGaN/GaN heterostructures using capacitance–voltage carrier profiling

Miller, E. J.; Yu, E. T.; Poblenz, C.; Elsass, C.; Speck, J. S.
May 2002
Applied Physics Letters;5/13/2002, Vol. 80 Issue 19, p3551
Academic Journal
The polarization charge at Al[sub x]Ga[sub 1-x]N/GaN heterostructure interfaces arising from differences in spontaneous polarization between Al[sub x]Ga[sub 1-x]N and GaN and the presence of piezoelectric polarization in strained layers has been directly measured using capacitance–voltage carrier profiling in GaN/Al[sub x]Ga[sub 1-x]N/GaN heterostructures with varying Al composition grown by molecular-beam epitaxy. The measured polarization charge densities (2.36±0.30×10[sup 12] e/cm[sup 2], 6.79±0.48×10[sup 12] e/cm[sup 2], and 6.92±0.74×10[sup 12] e/cm[sup 2] for 5%, 12%, and 16% Al[sub x]Ga[sub 1-x]N/GaN interfaces, respectively) reveal substantial bowing in the polarization charge as a function of Al composition, and are in reasonable agreement with those calculated using a model that accounts for the nonlinearity of the spontaneous and piezoelectric polarizations as functions of Al composition. Our results yield an explicit expression for polarization charge as a function of Al composition at an Al[sub x]Ga[sub 1-x]N/GaN interface. © 2002 American Institute of Physics.


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