Hall mobility enhancement caused by annealing of Si[sub 0.2]Ge[sub 0.8]/Si[sub 0.7]Ge[sub 0.3]/Si(001) p-type modulation-doped heterostructures

Myronov, M.; Phillips, P. J.; Whall, T. E.; Parker, E. H. C.
May 2002
Applied Physics Letters;5/13/2002, Vol. 80 Issue 19, p3557
Academic Journal
The effect of post-growth furnace thermal annealing (FTA) on the Hall mobility and sheet carrier density measured at 9–300 K in the Si[sub 0.2]Ge[sub 0.8]/Si[sub 0.7]Ge[sub 0.3]/Si(001) p-type modulation-doped heterostructures was studied. FTA treatments in the temperature range of 600–900 °C for 30 min were performed on similar heterostructures but with two Si[sub 0.2]Ge[sub 0.8] channel thicknesses. The annealing at 600 °C is seen to have a negligible effect on the Hall mobility as well as on the sheet carrier density. Increases in the annealing temperature resulted in pronounced successive increases of the mobility. For both samples the maximum Hall mobility was observed after FTA at 750 °C. Further increases of the annealing temperature resulted in a decrease in mobility. The sheet carrier density showed the opposite behavior with an increase in annealing temperature. The mechanism causing this behavior is discussed. Structural characterization of as-grown and annealed samples was done by cross-sectional transmission electron microscopy. © 2002 American Institute of Physics.


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