TITLE

Low-temperature integration of lead-based ferroelectric capacitors on Si with diffusion barrier layer

AUTHOR(S)
Liu, B. T.; Maki, K.; Aggarwal, S.; Nagaraj, B.; Nagarajan, V.; Salamanca-Riba, L.; Ramesh, R.; Dhote, A. M.; Auciello, O.
PUB. DATE
May 2002
SOURCE
Applied Physics Letters;5/13/2002, Vol. 80 Issue 19, p3599
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Ferroelectric lead zirconate titanate thin films have been integrated on silicon substrates using Ti–Al-based conducting diffusion barriers produced by sputter deposition. The microstructure of the Ti–Al barrier layer was systematically altered through changes in the sputtering conditions, specifically the power density and deposition pressure. We find that the crystallinity of the Ti–Al film strongly correlates with sputtering power density and ambient i.e., it is amorphous at low power density and/or high deposition pressure, and polycrystalline at high power density and/or low deposition pressure. Electron energy loss spectroscopy studies demonstrate that the amorphous Ti–Al (a-Ti–Al) films contain a higher concentration of dissolved oxygen than crystalline Ti–Al. A low temperature sol–gel process has been used to prepare Pb(Zr,Ti)O[sub 3] PZT films at 450 °C on conducting Si wafers with a-Ti–Al conducting barrier layer and La–Sr–Co–O top and bottom electrodes. The excellent ferroelectric properties obtained with the a-Ti–Al barrier provide a promising approach for integration of PZT-based capacitors with silicon transistor technology for the fabrication of nonvolatile ferroelectric memories. © 2002 American Institute of Physics.
ACCESSION #
6630254

 

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