TITLE

Photoluminescence properties of Eu[sup 3+]-doped ZnS nanocrystals prepared in a water/methanol solution

AUTHOR(S)
Qu, S. C.; Zhou, W. H.; Liu, F. Q.; Chen, N. F.; Wang, Z. G.; Pan, H. Y.; Yu, D. P.
PUB. DATE
May 2002
SOURCE
Applied Physics Letters;5/13/2002, Vol. 80 Issue 19, p3605
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Monodispersed ZnS and Eu[sup 3+]-doped ZnS nanocrystals have been prepared through the co-precipitation reaction of inorganic precursors ZnCl[sub 2], EuCl[sub 3], and Na[sub 2]S in a water/methanol binary solution. The mean particle sizes are about 3–5 nm. The structures of the as-prepared ZnS nanoparticles are cubic (zinc blende) as demonstrated by an x-ray powder diffraction. Photoluminescence studies showed a stable room temperature emission in the visible spectrum region for all the samples, with a broadening in the emission band and, in particular, a partially overlapped twin peak in the Eu[sup 3+]-doped ZnS nanocrystals. The experimental results also indicated that Eu[sup 3+]-doped ZnS nanocrystals, prepared by controlling synthetic conditions, were stable. © 2002 American Institute of Physics.
ACCESSION #
6630252

 

Related Articles

  • Influence of growth temperature on morphological, structural and photoluminescence properties of ZnO nanostructure thin layers and powders deposited by thermal evaporation. ARJMAND, YASER; ESHGHI, HOSEIN // Bulletin of Materials Science;Dec2014, Vol. 37 Issue 7, p1663 

    Zinc oxide (ZnO) nanostructures were grown as thin films on the p-silicon (100) wafer and also in the form of powder inside the boat by heating (550-950 C) zinc powder in the presence of oxygen without any catalyst or additives, using the thermal evaporation method. The field-emission scanning...

  • Influence of surface states on the photoluminescence from silicon nanostructures. Islam, Md. N.; Kumar, Satyendra // Journal of Applied Physics;2/1/2003, Vol. 93 Issue 3, p1753 

    We report a phenomenological model to analyze the room temperature photoluminescence (PL) spectra observed from silicon nanostructures. We have explicitly incorporated the effects of localized surface states along with quantum confinement effects to obtain an analytical expression for the...

  • Observation of two-step excitation of photoluminescence in silicon nanostructures. Golovan�, L. A.; Goncharov, A. A.; Timoshenko, V. Yu.; Shkurinov, A. P.; Kashkarov, P. K.; Koroteev, N. I. // JETP Letters;11/25/98, Vol. 68 Issue 10, p770 

    Efficient visible-range photoluminescence with photon energy higher than the photon energy of the exciting radiation is observed in nanostructures of porous silicon subjected to heat treatment in vacuum. The photoluminescence intensity is found to be virtually identical for cw and femtosecond...

  • Photoluminescence and passivation of silicon nanostructures. Redman, D.A.; Follstaedt, D.M. // Applied Physics Letters;11/7/1994, Vol. 65 Issue 19, p2386 

    Demonstrates the use of a method to fabricate nanometer-scale structures in silicon for photoluminescence studies. Implantation of helium ions to form a dense subsurface layer of small cavities; Failure of the implanted specimens to yield detectable photoluminescence; Production of a blueshift...

  • Visible photoluminescence from Si clusters in γ-irradiated amorphous SiO2. Nishikawa, Hiroyuki; Watanabe, Eiki; Ito, Daisuke; Sakurai, Yuryo; Nagasawa, Kaya; Ohki, Yoshimichi // Journal of Applied Physics;9/15/1996, Vol. 80 Issue 6, p3513 

    Focuses on a study which examined the photoluminescence from silicon clusters in gamma-irradiated amorphous silicon dioxide. Optical properties of silicon nanostructures; Methodology of the study; Results and discussion.

  • Synthesis, structure, and photoluminescence of very thin and wide alpha silicon nitride (α-Si[sub 3]N[sub 4]) single-crystalline nanobelts. Long-Wei Yin, L.; Bando, Yoshio; Ying-Chun Zhu; Yu-Bao Li, Yoshio // Applied Physics Letters;10/27/2003, Vol. 83 Issue 17, p3584 

    Large quantities of very thin and wide single-crystal alpha silicon nitride (α-Si[sub 3]N[sub 4]) nanobelts were synthesized by a vapor-solid thermal reaction between ammonia and silicon monoxide (SiO) without using any added catalyst. Scanning electron microscopy, high-resolution electron...

  • Influence of light intensity on the photoluminescence of silicon nanostructures. Amans, D.; Guillois, O.; Ledoux, G.; Porterat, D.; Reynaud, C. // Journal of Applied Physics;4/15/2002, Vol. 91 Issue 8, p5334 

    The strong visible photoluminescence (PL) of nanostructured silicon, such as porous Silicon and silicon nanocrystals, is studied as a function of the power and the wavelength of the excitation laser source. The position of the PL peak is a function of the fluence: when the incident fluence is...

  • FABRICATION AND CHARACTERIZATION OF TETRALEG ZINC OXIDE NANOSTRUTURE USING EVAPORATION METHODE. Hashim, A. J.; Jaafar, M. S.; Ghazai, Alaa J.; Ahmed, N. M. // Digest Journal of Nanomaterials & Biostructures (DJNB);Apr-Jun2012, Vol. 7 Issue 2, p487 

    In the current work, tetraleg zinc oxide (ZnO) nanostructure has been fabricated using evaporation method, the structural and optical properties investigated using high resolution X-ray diffraction (HRXRD) which confirmed that ZnO film is successfully deposited on silicon (Si) substrate. This...

  • Excitonic gain and stimulated ultraviolet emission in nanocrystalline zinc-oxide powder. Sun, Y.; Ketterson, J. B.; Ketterson, J.B.; Wong, G. K. L.; Wong, G.K.L. // Applied Physics Letters;10/9/2000, Vol. 77 Issue 15 

    We have studied ultraviolet photoluminescence from high-purity zinc-oxide powder over a wide temperature range (2-293 K). At low temperatures, the spontaneous emission is due to radiative recombination of excitons bound to donors and acceptors. At high temperature (>90 K), it mainly consists of...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics