TITLE

InAs self-assembled quantum-dot lasers grown on (100) InP

AUTHOR(S)
Allen, C. Nı`.; Poole, P. J.; Marshall, P.; Fraser, J.; Raymond, S.; Fafard, S.
PUB. DATE
May 2002
SOURCE
Applied Physics Letters;5/13/2002, Vol. 80 Issue 19, p3629
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Five stacked layers of InAs quantum dots (QDs) embedded in quaternary InGaAsP are grown on (100) InP substrate to form a laser diode. The QD ensemble has a density of 1.5×10[sup 10] cm[sup -2] and emits light at ∼1.6 μm at 77 K. Lasing wavelength and threshold current density can be shifted by changing the cavity length of the laser diode and the latter reaches a value as low as 49 A/cm2 at 77 K for a gate size of 2000 μm×150 μm. Temperature dependence of the threshold current is observed implying the presence of thermionic emission increasing with temperature. © 2002 American Institute of Physics.
ACCESSION #
6630244

 

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