InAs self-assembled quantum-dot lasers grown on (100) InP

Allen, C. Nı`.; Poole, P. J.; Marshall, P.; Fraser, J.; Raymond, S.; Fafard, S.
May 2002
Applied Physics Letters;5/13/2002, Vol. 80 Issue 19, p3629
Academic Journal
Five stacked layers of InAs quantum dots (QDs) embedded in quaternary InGaAsP are grown on (100) InP substrate to form a laser diode. The QD ensemble has a density of 1.5×10[sup 10] cm[sup -2] and emits light at ∼1.6 μm at 77 K. Lasing wavelength and threshold current density can be shifted by changing the cavity length of the laser diode and the latter reaches a value as low as 49 A/cm2 at 77 K for a gate size of 2000 μm×150 μm. Temperature dependence of the threshold current is observed implying the presence of thermionic emission increasing with temperature. © 2002 American Institute of Physics.


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