Carbon reactivation kinetics in the base of heterojunction GaInP–GaAs bipolar transistors

Mimila-Arroyo, J.; Bland, S. W.; Chevallier, J.
May 2002
Applied Physics Letters;5/13/2002, Vol. 80 Issue 19, p3632
Academic Journal
The reactivation kinetics of carbon acceptors in the base region of GaInP/GaAs heterojunction bipolar transistors was studied. The reactivation was achieved by ex situ thermal annealing, through a multistage annealing experiment where the carrier concentration was monitored at each stage. Results indicate that carbon reactivation follows a first-order kinetics process in which the activation energy appears to be the sum of the energy needed to debond the hydrogen from the carbon–hydrogen complex, and the energy necessary to overcome the electrostatic junction barrier. The reactivation constant is thermally activated with an activation energy of 2.83 eV and an attempt frequency of 1.2×10[sup 13] s[sup -1]. © 2002 American Institute of Physics.


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