TITLE

Raster-scan imaging with normal-incidence, midinfrared InAs/GaAs quantum dot infrared photodetectors

AUTHOR(S)
Stiff-Roberts, A. D.; Chakrabarti, S.; Pradhan, S.; Kochman, B.; Bhattacharya, P.
PUB. DATE
May 2002
SOURCE
Applied Physics Letters;5/6/2002, Vol. 80 Issue 18, p3265
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We demonstrate normal incidence infrared imaging with quantum dot infrared photodetectors using a raster-scan technique. The device heterostructure, containing multiple layers of InAs/GaAs self-organized quantum dots, were grown by molecular-beam epitaxy. Individual devices have been operated at temperatures as high as 150 K and, at 100 K, are characterized by λ[sub peak]=3.72 µm, J[sub dark]=6x10[sup -10] A/cm² for a bias of 0.1 V, and D[sup *]=2.94 x 10[sup 9] cmHz[sup ½]/W at a bias of 0.2 V. Raster-scan images of heated objects and infrared light sources were obtained with a small (13 x 13) interconnected array of detectors (to increase the photocurrent) at 80 K.
ACCESSION #
6579264

 

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