TITLE

Monolithic integration of near-infrared Ge photodetectors with Si complementary metal–oxide–semiconductor readout electronics

AUTHOR(S)
Masini, Gianlorenzo; Cencelli, Valentino; Colace, Lorenzo; De Notaristefani, Francesco; Assanto, Gaetano
PUB. DATE
May 2002
SOURCE
Applied Physics Letters;5/6/2002, Vol. 80 Issue 18, p3268
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Using a low-temperature technology for polycrystalline Ge deposition, we report on the monolithic integration of an array of near-infrared Ge photodiodes on Si complementary metal-oxidesemiconductor (CMOS) electronics. The integrated microsystem consists of a linear array of 120 x 120 µm² pixels, an analog CMOS multiplexer and a transimpedance amplifier. The resulting photoresponse covers the near-infrared up to 1.6 µm.
ACCESSION #
6579263

 

Related Articles

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics