TITLE

Intersubband absorption performed on p-type modulation-doped Si[sub 0.2]Ge[sub 0.8]/Si quantum wells grown on Si[sub 0.5]Ge[sub 0.5] pseudosubstrate

AUTHOR(S)
Diehl, L.; Sigg, H.; Dehlinger, G.; Gru¨tzmacher, D.; Mu¨ller, E.; Gennser, U.; Sagnes, I.; Fromherz, T.; Campidelli, Y.; Kermarrec, O.; Bensahel, D.; Faist, J.
PUB. DATE
May 2002
SOURCE
Applied Physics Letters;5/6/2002, Vol. 80 Issue 18, p3274
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We present intersubband absorption measurements performed on p-type quasistrain-compensated modulation-doped Si[sub 0.2]Ge[sub 0.8]/Si quantum wells grown on Si[sub 0.5]Ge[sub 0.5] pseudosubstrates. Several intersubband absorption peaks are observed up to room temperature. A strong confinement shift of the resonance occuring between the ground and the first excited heavy hole states has been observed, with the absorption peak shifting from λ = 5.3 µm to as short as 3.8 µm. Excellent overall agreement with a 6 band k-p calculation is obtained, proving the accuracy of recently predicted values of band offsets.
ACCESSION #
6579261

 

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