Intersubband absorption performed on p-type modulation-doped Si[sub 0.2]Ge[sub 0.8]/Si quantum wells grown on Si[sub 0.5]Ge[sub 0.5] pseudosubstrate

Diehl, L.; Sigg, H.; Dehlinger, G.; Gru¨tzmacher, D.; Mu¨ller, E.; Gennser, U.; Sagnes, I.; Fromherz, T.; Campidelli, Y.; Kermarrec, O.; Bensahel, D.; Faist, J.
May 2002
Applied Physics Letters;5/6/2002, Vol. 80 Issue 18, p3274
Academic Journal
We present intersubband absorption measurements performed on p-type quasistrain-compensated modulation-doped Si[sub 0.2]Ge[sub 0.8]/Si quantum wells grown on Si[sub 0.5]Ge[sub 0.5] pseudosubstrates. Several intersubband absorption peaks are observed up to room temperature. A strong confinement shift of the resonance occuring between the ground and the first excited heavy hole states has been observed, with the absorption peak shifting from λ = 5.3 µm to as short as 3.8 µm. Excellent overall agreement with a 6 band k-p calculation is obtained, proving the accuracy of recently predicted values of band offsets.


Related Articles

  • Effects of spectral hole burning, carrier heating, and carrier transport on the small-signal.... Chin-Yi Tsai; Chin-Yao Tsai // Applied Physics Letters;11/20/1995, Vol. 67 Issue 21, p3084 

    Presents an analysis of the high-speed characteristics of quantum well lasers. Impact of spectral hole burning, carrier heating and carrier transport on lasers; Derivation of an exact form of the small-signal modulation response; Examination of the effects of carrier dephasing time in spectral...

  • Carrier temperature and spectral holeburning dynamics in InGaAsP quantum well laser amplifiers. Willatzen, M.; Mark, J.; Mork, J.; Seltzer, C.P. // Applied Physics Letters;1/10/1994, Vol. 64 Issue 2, p143 

    Examines the carrier temperature and spectral holeburning dynamics in indium gallium arsenic phosphide quantum well laser amplifiers. Transition from pump-induced heating to pump-induced cooling of the carriers; Influence of quantum confinement on band structure; Characterization of the gain...

  • Carrier heating and spectral hole burning in strained-layer quantum-well laser amplifiers at 1.5.... Hall, K.L.; Lenz, G. // Applied Physics Letters;11/23/1992, Vol. 61 Issue 21, p2512 

    Investigates the carrier heating and spectral hole burning in strained-layer multiple-quantum-well laser amplifiers. Impact of quantum-well carriers on the frequency response of amplifiers; Effect of free-carrier absorption on the thermalization of hot-carrier distribution; Distinction between...

  • Femtosecond investigations of spectral hole burning in semiconductor lasers. Chi-Kuang Sun; Golubovic, Boris // Applied Physics Letters;3/27/1995, Vol. 66 Issue 13, p1650 

    Investigates the spectral hole burning effects in the gain region of InGaAs/AlGaAs strained layer single quantum well diode lasers. Use of the heterodyne nondegenerate pump probe technique; Measurement of the femtosecond dynamics and spectral dependence of transient gain in semiconductor...

  • Stability of frequency domain information bits in amorphous organic materials. Köhler, W.; Zollfrank, J.; Friedrich, J. // Journal of Applied Physics;10/1/1989, Vol. 66 Issue 7, p3232 

    Discusses a study which investigated the stability of frequency domain information bits as a function of time and temperature fluctuations. Application of persistent spectral hole burning that is the most attractive; Use of the frequency domain by burning many spectral holes into the broad...

  • Spectral diffusion and 14N quadrupole splittings in absorption detected magnetic resonance hole burning spectra of photosynthetic reaction centers. Greis, J. W.; Angerhofer, A.; Norris, J. R.; Scheer, H.; Struck, A.; von Schütz, J. U. // Journal of Chemical Physics;4/1/1994, Vol. 100 Issue 7, p4820 

    Zero field absorption detected magnetic resonance hole burning measurements were performed on photosynthetic reaction centers of the bacteria Rhodobacter sphaeroides R26 and Rhodopseudomonas viridis. Extrapolation to zero microwave power yielded pseudohomogeneous linewidths of 2.0 MHz for...

  • Room temperature spectral hole burning and electron transfer in Sm-doped aluminosilicate glasses. Song, Hongwei; Hayakawa, Tomokatsu // Journal of Applied Physics;11/15/1999, Vol. 86 Issue 10, p5619 

    Presents a study which measured the persistent spectral hole burning and absorption spectra with burning light in aluminosilicate glasses to reveal the electron transfer. Methodology; Results and discussion; Conclusions.

  • The impact of nonequilibrium gain in a spectral laser diode model. Bream, P. J.; Lim, J. J.; Bull, S.; Andrianov, A. V.; Sujecki, S.; Larkins, E. C. // Optical & Quantum Electronics;Oct2006, Vol. 38 Issue 12-14, p1019 

    We describe the inclusion of nonequilibrium gain into a self-consistent 2.5D CW spectral laser diode model and report on the use of this model to investigate the origin of gain compression in a 975 nm high-brightness tapered QW laser diode. Nonequilibrium gain is calculated using a dynamic gain...

  • Slow light and saturable absorption. Selden, A. // Optics & Spectroscopy;Jun2009, Vol. 106 Issue 6, p881 

    Quantitative analysis of slow light experiments utilising coherent population oscillation (CPO) in a range of saturably absorbing media, including ruby and alexandrite, Er3+:Y2SiO5, bacteriorhodopsin, semiconductor quantum devices and erbium-doped optical fibres, shows that the observations may...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics