Thin film alloy mixtures for high speed phase change optical storage: A study on (Ge[sub 1]Sb[sub 2]Te[sub 4])[sub 1-x](Sn[sub 1]Bi[sub 2]Te[sub 4])[sub x]

Lee, Tae-Yon; Kim, Ki-Bum; Cheong, Byung-ki; Lee, Taek Sung; Park, Sung Jin; Lee, Kyeong Seok; Kim, Won Mok; Kim, Soon Gwang
May 2002
Applied Physics Letters;5/6/2002, Vol. 80 Issue 18, p3313
Academic Journal
An approach is proposed to develop recording materials for high speed phase change optical data storage. It utilizes a thin film alloy mixture between a stoichiometric GeSbTe alloy and an additive ternary telluride alloy. Selection rules for an additive alloy are suggested. For a test, (Ge[sub 1]Sb[sub 2]Te[sub 4])[sub 1-x](Sn[sub 1]Bi[sub 2]Te[sub 4])[sub x] thin films are deposited by co-sputtering and their structural and thermal properties are studied. Ge[sub 1]Sb[sub 2]Te[sub 4] and Sn[sub 1]Bi[sub 2]Te[sub 4] are found to form a completely soluble pseudo-binary system, whose crystalline lattice parameters obey Vegard's rule over the entire range of x (0


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