Lattice distortions and the transmuted-Ge related luminescence in neutron-transmutation-doped GaN

Kuriyama, K.; Tokumasu, T.; Takahashi, Jun; Kondo, H.; Okada, M.
May 2002
Applied Physics Letters;5/6/2002, Vol. 80 Issue 18, p3328
Academic Journal
The lattice distortion and the transmuted-Ge related luminescence in neutron-transmutation-doped (NTD) GaN are studied by combining Rutherford backscattering spectroscopy/channeling, Raman scattering, and photoluminescence methods. The lattice displacement of Ga atoms of ∼0.12 Å from the 〈0001〉 row is estimated from the normalized angular yield profiles, preserving the single crystallinity in as-irradiated GaN with a minimum yield (Χ[sub min]) of 7%. A 2.84 eV emission band observed in 600 °C annealed NTD-GaN is associated with the Ga interstitial, supporting the lattice distortion. Two emission bands at 2.90 eV and 2.25 eV observed in 1000 °C annealed NTD-GaN are assigned to a negatively charged DX-like center of Ge at Ga site and a complex defect attributed to Ge at Ga site and Ga vacancy, respectively.


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