Si–SiO[sub 2] barrier height and its temperature dependence in metal-oxide-semiconductor structures with ultrathin gate oxide

Hadjadj, A.; Simonetti, O.; Maurel, T.; Salace, G.; Petit, C.
May 2002
Applied Physics Letters;5/6/2002, Vol. 80 Issue 18, p3334
Academic Journal
The potential distribution across n[sup +] polycristalline silicon (poly-Si)/SiO[sub 2]/Si(p) structures, with an oxide layer thinner than 4 nm, was determined using a full quantum self-consistent model. When applied to capacitance-voltage measurements, it allows an accurate determination of the oxide thickness t[sub ox] to be made. When applied to current-voltage measurements, in the Fowler-Nordheim regime, it leads to an accurate determination of the barrier height Φ at the interface between the emitting poly-Si gate electrode and the oxide, over a temperature range 20-250 °C. The results show a constant Φ(0 K) for 3 nm


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