TITLE

Anisotropy in breakdown field of 4H–SiC

AUTHOR(S)
Nakamura, Shun-ichi; Kumagai, Hironori; Kimoto, Tsunenobu; Matsunami, Hiroyuki
PUB. DATE
May 2002
SOURCE
Applied Physics Letters;5/6/2002, Vol. 80 Issue 18, p3355
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The breakdown fields along the 〈11&2macr;0〉 and 〈03&3macr;8〉 directions in 4H-SiC have been measured. For the measurements, epitaxial p[sup +] n diodes with mesa structures were fabricated on the (11&2macr;0) and (03&3macr;8) faces, and they showed good rectification properties and avalanche breakdown. The breakdown fields along these directions calculated from the breakdown voltage were found to be about three quarters of that along the 〈0001〉 direction in 4H-SiC. The cause of the anisotropy in breakdown field is discussed.
ACCESSION #
6579233

 

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