Room temperature operation of a high output current magnetic tunnel transistor

van Dijken, Sebastiaan; Jiang, Xin; Parkin, Stuart S. P.
May 2002
Applied Physics Letters;5/6/2002, Vol. 80 Issue 18, p3364
Academic Journal
The structure and properties of a magnetic tunnel transistor with high current output at room temperature are presented. The transistor marries a two-terminal magnetic tunnel junction with an Al[sub 2]O[sub 3] tunnel barrier and a GaAs collector. The output current depends on the spin-dependent transport of hot electrons in the base layer of the transistor, which is formed from a single ultrathin ferromagnetic film. At a bias voltage of 1.4 V across the tunnel barrier, output currents larger than 1 µA and magnetocurrent changes of 64% are obtained at room temperature.


Related Articles

  • Resonant tunneling hot-electron transistor with current gain of 5. Mori, Toshihiko; Ohnishi, Hiroaki; Imamura, Kenichi; Muto, Syunichi; Yokoyama, Naoki // Applied Physics Letters;12/29/1986, Vol. 49 Issue 26, p1779 

    By optimizing its structure, we have improved the current gain and collector-current peak-to-valley ratio of a resonant tunneling hot-electron transistor. The device has an asymmetric resonant tunneling barrier with an optimal well thickness to attain a higher peak-to-valley ratio for the...

  • SiGe resonant tunneling hot-carrier transistor. Rhee, S. S.; Chang, G. K.; Carns, T. K.; Wang, K. L. // Applied Physics Letters;3/12/1990, Vol. 56 Issue 11, p1061 

    A SiGe three-terminal hot-hole transistor using a double-barrier resonant tunneling structure as an emitter is fabricated. Injected carriers from the emitter are transferred near-ballistically into the collector through a thin base. The demonstrated main feature of the device is a controllable...

  • Mechanisms of carrier and energy injection in three-terminal laser structures. Tolstikhin, Valery I.; Khrenov, Gregory Yu. // Applied Physics Letters;10/7/1996, Vol. 69 Issue 15, p2157 

    The mechanisms of injection in the recently proposed three-terminal laser structures and the ability to effectively tune the energy yield associated with a single injected electron are analyzed, by means of the ensemble Monte Carlo simulations, with respect to a high-speed modulation using...

  • Quantum-well infrared photodetectors. Levine, B. F. // Journal of Applied Physics;10/15/1993, Vol. 74 Issue 8, pR1 

    Examines quantum-well infrared photodetectors including the device physics of the intersubband absorption and hot-carrier transport process for individual detectors. Modulation of intersubband absorption; Use of negative differential photoconductance and double-barrier coherent tunneling;...

  • Resonant-tunneling injection hot electron laser: An approach to picosecond gain-switching and.... Tolstikhin, Valery I.; Willander, Magnus // Applied Physics Letters;10/30/1995, Vol. 67 Issue 18, p2684 

    Analyzes the picosecond pulse generation from resonant-tunneling injection hot electron laser (RIHEL). Generation of well-shaped optical pulses; Improvement of the high-speed performance of laser diodes; Observation of the schematic cross section of a RIHEL.

  • Hot-electron transport in a graded band-gap base heterojunction bipolar transistor. Hayes, J. R.; Harbison, J. P. // Applied Physics Letters;8/8/1988, Vol. 53 Issue 6, p490 

    In this letter we report the direct observation of electron heating in an electric field using hot-electron spectroscopy. The device structure used for the study was a graded band-gap base heterojunction bipolar transistor, fabricated in the GaAs/AlGaAs semiconductor alloy system. A thermal...

  • Bistable hot electron transport in InP/GaInAs composite collector heterojunction bipolar.... Ritter, D.; Hamm, R.A. // Applied Physics Letters;7/6/1992, Vol. 61 Issue 1, p70 

    Investigates the bistable hot electron transport in indium-phosphorus/gallium-indium-arsenide composite collector heterojunction bipolar transistors (CCHBT). Characteristics of the CCHBT; Ways to suppress the bistability; Components of the CCHBT structures.

  • Role of hot electron base transport in abrupt emitter InP/Ga[sub 0.43]In[sub 0.53]As.... Ritter, Dan; Hamm, R.A. // Applied Physics Letters;5/30/1994, Vol. 64 Issue 22, p2988 

    Examines the role of hot electron base transport in abrupt emitter InP/Ga[sub 0.43]In[sub 0.53]As heterojunction bipolar transistor. Description of the diffusion constant of minority carrier electrons; Attribution of the short base transit time to the diffusion constant; Contribution of hot...

  • Room-temperature operation of hot-electron transistors. Levi, A. F. J.; Chiu, T. H. // Applied Physics Letters;9/28/1987, Vol. 51 Issue 13, p984 

    We demonstrate the first room-temperature operation of a double heterojunction unipolar hot-electron transistor. Our test structure has a current gain greater than 10 and a measured current drive capability in excess of 1200 A cm-2. The device uses an indirect, wide-band-gap AlSb0.92As0.08...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics