TITLE

Room temperature operation of a high output current magnetic tunnel transistor

AUTHOR(S)
van Dijken, Sebastiaan; Jiang, Xin; Parkin, Stuart S. P.
PUB. DATE
May 2002
SOURCE
Applied Physics Letters;5/6/2002, Vol. 80 Issue 18, p3364
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The structure and properties of a magnetic tunnel transistor with high current output at room temperature are presented. The transistor marries a two-terminal magnetic tunnel junction with an Al[sub 2]O[sub 3] tunnel barrier and a GaAs collector. The output current depends on the spin-dependent transport of hot electrons in the base layer of the transistor, which is formed from a single ultrathin ferromagnetic film. At a bias voltage of 1.4 V across the tunnel barrier, output currents larger than 1 µA and magnetocurrent changes of 64% are obtained at room temperature.
ACCESSION #
6579230

 

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