TITLE

Structure and piezoelectric properties of sol–gel-derived 0.5 Pb[Yb[sub 1/2]Nb[sub 1/2]]O[sub 3]–0.5 PbTiO[sub 3] thin films

AUTHOR(S)
Zhang, Q. Q.; Zhou, Q. F.; Trolier-McKinstry, S.
PUB. DATE
May 2002
SOURCE
Applied Physics Letters;5/6/2002, Vol. 80 Issue 18, p3370
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
0.5 Pb[Yb[sub ½]Nb[sub ½]O[sub 3] - 0.5 PbTiO[sub 3] thin films were deposited on (111) Pt/Ti/SiO[sub 2]/Si substrates by sol-gel processing using a thin Pb(Zr[sub 0.52]Ti[sub 0.48])O[sub 3] seed layer. X-ray diffraction analysis and scanning electron microscopy revealed that the films were strongly (111) oriented, mimicking the orientation of the (111) Pt/Ti/SiO[sub 2]/Si substrate. No pyrochlore phase was observed by x-ray diffraction and the films had a uniform grain size of about 50-60 nm. The dielectric permittivity and loss factor varied only slightly with frequency in the range of 100-10 000 Hz. At 1 kHz, the dielectric permittivity was 1025 and dielectric loss was 0.028. The films exhibited good ferroelectric and piezoelectric properties. The remanent polarization (P[sub r]) was 30 µC/cm². The effective transverse piezoelectric e[sub 31,f] coefficient (-4.8 C/m²) of the films was measured using a modified wafer flexure method.
ACCESSION #
6579228

 

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