Self-assembly of Si nanoclusters on 6H–SiC(0001)-(3×3) reconstructed surface

Ong, W. J.; Tok, E. S.; Xu, H.; Wee, A. T. S.
May 2002
Applied Physics Letters;5/6/2002, Vol. 80 Issue 18, p3406
Academic Journal
Scanning tunneling microscopy (STM) and x-ray photoelectron spectroscopy (XPS) were used to observe the formation of metastable (6x6)-Si nanoclusters (diameter ∼16.5±0.1 A) on 6H-SiC(0001)-(3 x 3) surface. STM and XPS data suggest that these clusters are derived from the ejection of the Si-tetracluster unit of the initial (3 x 3) reconstruction at elevated temperatures and occur in a less Si-rich environment than the initial surface. The observed surface restructuring is related to the reconfiguration of coplanar Si bonds within the (3 x 3) unit cell. The occurrence of these regularly sized "magic" clusters demonstrates the potential of nanostructure formation of Si on SiC.


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