Mapping strain fields in ultrathin bonded Si wafers by x-ray scattering

Nielsen, M.; Poulsen, M.; Bunk, O.; Kumpf, C.; Feidenhans’l, R.; Johnson, R. L.; Jensen, F.; Grey, F.
May 2002
Applied Physics Letters;5/6/2002, Vol. 80 Issue 18, p3412
Academic Journal
X-ray scattering reveals the atomic displacements arising from rotational misalignment in ultrathin silicon bonded wafers. For a 4.3 nm top wafer, the strain field penetrates from the bonded interface to the surface and produces distinctive finite-size oscillations in x-ray data. Analytical calculations permit the atomic displacements throughout the thin top wafer to be modeled.


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