TITLE

Effects of wet-oxidation treatment on Al[sub 0.45]Ga[sub 0.55]As/GaAs graded-like superlattice-emitter bipolar transistor with low turn-on voltage

AUTHOR(S)
Lour, Wen-Shiung; Wu, Yen-Wei; Tan, Shih-Wei; Tsai, Ming-Kwen; Yang, Ying-Jay
PUB. DATE
May 2002
SOURCE
Applied Physics Letters;5/6/2002, Vol. 80 Issue 18, p3436
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report an Al[sub x]Ga[sub 1-x]As/GaAs heterojunction bipolar transistor (HBT) with a high Al mole fraction of x = 0.45. A digital graded superlattice emitter, forming a step-wise graded composition, is used to smooth out the potential spike resulting from a large conduction-band offset. HBT's with such a digital graded emitter as a passivation layer exhibit a small offset voltage of 55 mV, a low turn-on voltage of 0.87 V and a current gain as high as 400. Effects of wet-oxidation treatment on fabricated HBT's are also investigated. Experimental results reveal that the studied HBT's exhibit reduced collector currents at a fixed base current in the early stage of the wet-oxidation treatment. However, better surface passivation and higher current gain are available after an appropriate wet-oxidation treatment is used to reduce base current. We qualitatively modeled these behaviors by introducing a concept of built-in field along the graded emitter.
ACCESSION #
6579205

 

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