Electrical properties of amorphous silicon carbide films

Biswas, N.; Wang, X.; Gangopadhyay, S.
May 2002
Applied Physics Letters;5/6/2002, Vol. 80 Issue 18, p3439
Academic Journal
The interfacial properties of silicon carbide films on silicon substrate, using capacitance-voltage (C-V) and conductance-voltage techniques have been studied. The C-V characteristics observed largely depended on processing conditions. An interface state density of 2.38 x 10[sup 10] eV[sup -1] cm[sup -2] at the midgap was calculated for this sample. When CF[sub 4] was added to the precursors, the C - V curves were observed to have a "ledge" at the end of the accumulation region, indicative of the presence of additional localized defect states that respond to the applied ac signal. An interface state density of 2.11 x 10[sup 11] eV[sup -1] cm[sup -2] at the midgap was observed for this sample. However fluorination in plasma caused the etching of the weak bond, and hence a reduction in the fixed charge density and hysteresis.


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