Effects of insertion of strain-mediating layers on luminescence properties of 1.3-μm GaInNAs/GaNAs/GaAs quantum-well structures

Pavelescu, E.-M.; Peng, C. S.; Jouhti, T.; Konttinen, J.; Li, W.; Pessa, M.; Dumitrescu, M.; Spa⁁nulescu, S.
April 2002
Applied Physics Letters;4/29/2002, Vol. 80 Issue 17, p3054
Academic Journal
We present a 1.3-μm GaInNAs/GaAs quantum-well heterostructure, which consists of a strain-mediating GaInNAs layer grown between a compressive-strained quantum well and a tensile-strained GaNAs layer. Compared to a similar sample with no strain-mediating layer, this heterostructure exhibits improved material properties and remarkable redshift of emission with enhanced light intensity. The observations are based on photoluminescence spectra and x-ray diffraction data measured for the active region of the samples. © 2002 American Institute of Physics.


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