TITLE

Delayed phase explosion during high-power nanosecond laser ablation of silicon

AUTHOR(S)
Lu, Quanming; Mao, Samuel S.; Mao, Xianglei; Russo, Richard E.
PUB. DATE
April 2002
SOURCE
Applied Physics Letters;4/29/2002, Vol. 80 Issue 17, p3072
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
An important parameter for high-irradiance laser ablation is the ablation crater depth, resulting from the interaction of individual laser pulses on a targeted surface. The crater depth for laser ablation of single-crystal silicon shows a dramatic increase at a laser intensity threshold of approximately 2×10[sup 10] W/cm[sup 2], above which, large (micron-sized) particulates were observed to eject from the target. We present an analysis of this threshold phenomenon and demonstrate that thermal diffusion and subsequent explosive boiling after the completion of the laser pulse is a possible mechanism for the observed dramatic increase of the ablation depth. Calculations based on this delayed phase explosion model provide a satisfactory estimate of the measurements. In addition, we find that the shielding of an expanding mass plasma during laser irradiation has a profound effect on this threshold phenomenon. © 2002 American Institute of Physics.
ACCESSION #
6540294

 

Related Articles

  • Diffusivity of oxygen in Czochralski silicon at 400-750 ...C. Takeno, Hiroshi; Hayamizu, Yoshinori // Journal of Applied Physics;9/15/1998, Vol. 84 Issue 6, p3113 

    Cites an expermental investigation which determined the diffusivity of oxygen in Czochralski silicon crystal between the temperature rage of 400-750 degrees celcius. Details on a model of oxygen precipitation; Measurement of the oxygen diffusivity at different concentrations; In-depth look at...

  • Thermal wave reflection and refraction: Theoretical and experimental evidence. Bertolotti, M.; Liakhou, G.L. // Journal of Applied Physics;4/1/1999, Vol. 85 Issue 7, p3540 

    Describes and proves the basic phenomena which take place when thermal waves approach an interface between reflection and refraction. Use of the mirage technique in the investigation; Roles of the thermal diffusion length; Discussion on thermal wave reflection and refraction.

  • Properties of laser ablated porous silicon. Savin, D. P.; Roizin, Ya. O.; Demchenko, D. A.; Mugen´ski, E.; Soko´lska, I. // Applied Physics Letters;11/11/1996, Vol. 69 Issue 20, p3048 

    Luminescent films of porous silicon were obtained by laser ablation of crystalline silicon. The spectral and temporal characteristics of light emission from laser ablated porous silicon (LAPS) films critically depend on the chemical composition of the atmosphere in which they were fabricated....

  • Silicon nanowires prepared by laser ablation at high temperature. Zhang, Y. F.; Tang, Y. H.; Wang, N.; Yu, D. P.; Lee, C. S.; Bello, I.; Lee, S. T. // Applied Physics Letters;4/13/1998, Vol. 72 Issue 15 

    Silicon nanowires have been synthesized in high yield and high purity by using a high-temperature laser-ablation method with growth rates ranging from 10 to 80 μm/h. Transmission electron microscopic investigation shows that the nanowires are crystalline Si, and have diameters ranging from 3...

  • In situ ellipsometric characterization of SiNx films grown by laser ablation. Samano, E.C.; Machorro, R. // Journal of Applied Physics;11/1/1998, Vol. 84 Issue 9, p5296 

    Examines the synthesis of the uniform and smooth silicon nitride films through the use of the laser ablation of a Si3N4 sintered target. Monitoring of the evolution of the composition and thickness control of SiNx overlayers grown on single-crystal silicon (Si) and quartz substrates; Reference...

  • The optically active center and its activation process in Er-doped Si thin film produced by laser... Ishii, Masashi; Komuro, Shuji // Journal of Applied Physics;4/15/1999 Part 1 of 2, Vol. 85 Issue 8, p4024 

    Presents information on a study which investigated the local structure of erbium-doped silicon produced by the laser ablation technique. Experiments and local structure analysis; Results and discussion; Conclusion.

  • Epitaxial growth of YBa2Cu3O7-δ films on oxidized silicon with yttria- and zirconia-based buffer layers. Pechen, E. V.; Schoenberger, R.; Brunner, B.; Ritzinger, S.; Renk, K. F.; Sidorov, M. V.; Oktyabrsky, S. R. // Journal of Applied Physics;9/1/1993, Vol. 74 Issue 5, p3614 

    Presents a study of the epitaxial growth of YBa[sub 2]Cu[sub 3]O[sub 7-δ] (YBCO) on oxidized silicon with yttria- and zirconia-based buffer layers. Preparation of YBCO films in silicon; Use of laser ablation technique to preapare the buffer layers and the YBCO films; Methods on depositing...

  • Enhanced oxidation of silicon using a collimated hyperthermal ozone beam. Nishiguchi, T.; Morikawa, Y.; Miyamoto, M.; Nonaka, H.; Ichimura, S. // Applied Physics Letters;7/16/2001, Vol. 79 Issue 3 

    Silicon was oxidized by a collimated hyperthermal ozone beam produced by pulsed-laser ablation of solid ozone to increase the controllability of the silicon dioxide film thickness and to achieve low-temperature oxidation. The oxidation rate could be accurately controlled by the number of laser...

  • Coulomb explosion in femtosecond laser ablation of Si(111). Roeterdink, W. G.; Juurlink, L. B. F.; Vaughan, O. P. H.; Dura Diez, J.; Bonn, M.; Kleyn, A. W. // Applied Physics Letters;6/9/2003, Vol. 82 Issue 23, p4190 

    The ablation of ionized silicon is studied using near-infrared femtosecond laser pulses in the fluence regime from 1 to 9 J/cm[SUP2]. Two major peaks are observed in the mass spectrum corresponding to Si[SUP+] and Si[SUP2+]. In the time-of-flight transients of Si[SUP+], a bimodal structure is...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics