Ordering of Ge quantum dots with buried Si dislocation networks

Leroy, F.; Eymery, J.; Gentile, P.; Fournel, F.
April 2002
Applied Physics Letters;4/29/2002, Vol. 80 Issue 17, p3078
Academic Journal
Buried dislocation networks obtained by Si(001) wafer bonding pattern the free surface of the sample, giving rise to long-range undulations and short-range embossing, respectively, for flexion and rotation misalignement. Comparison with continuum-elasticity calculations reveals that this patterning is enhanced by strain-driven overetching. These surfaces are a template for growth, and we show that Ge quantum dots can be ordered with a fourfold symmetry by proceeding a postgrowth annealing. © 2002 American Institute of Physics.


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