TITLE

Direct observation of Ga-rich microdomains in crack-free AlGaN grown on patterned GaN/sapphire substrates

AUTHOR(S)
Riemann, T.; Christen, J.; Kaschner, A.; Laades, A.; Hoffmann, A.; Thomsen, C.; Iwaya, M.; Kamiyama, S.; Amano, H.; Akasaki, I.
PUB. DATE
April 2002
SOURCE
Applied Physics Letters;4/29/2002, Vol. 80 Issue 17, p3093
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The strong three-dimensional modulation of the optical and structural properties due to the self-organized formation of Ga-rich AlGaN microdomains is directly imaged by spectrally and spatially resolved cathodoluminescence microscopy. The 5-μm-thick, crack-free AlGaN was grown on patterned GaN/sapphire templates periodically structured into trenches and terraces. During initial AlGaN overgrowth, the modulation of the local AlGaN stochiometry results in marble-like striations of Ga accumulation clearly reflecting the pattern periodicity. In contrast, after subsequent overgrowth, a homogeneous emission wavelength, i.e., a homogeneous aluminum content, is found near the sample surface. However, the strong rise of quantum efficiency directly above the trenches indicates a drastic improvement of material quality. © 2002 American Institute of Physics.
ACCESSION #
6540286

 

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