Band alignment between GaAs and partially ordered GaInP

Zhang, Yong; Mascarenhas, Angelo; Wang, Lin-Wang
April 2002
Applied Physics Letters;4/29/2002, Vol. 80 Issue 17, p3111
Academic Journal
An empirical pseudopotential method is used for calculating the band structure of partially CuPt ordered Ga[sub x]In[sub 1-x]P alloy with order parameter η varying from 0 to 1. Because the relative band alignments between the binaries (GaAs, GaP, and InP) are taken into account in the pseudopotential fitting, such a calculation naturally yields the conduction and valence band alignment between the GaInP alloy and GaAs, as well as shows how the alignments change with the order parameter. The band alignment is found to change from type I to type II at η=0.46 (0.54) for x=0.50 (0.52), which is in good agreement with experimental data. © 2002 American Institute of Physics.


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