Bias-dependent photoluminescence in CdTe photovoltaics

Shvydka, Diana; Karpov, V. G.; Compaan, A. D.
April 2002
Applied Physics Letters;4/29/2002, Vol. 80 Issue 17, p3114
Academic Journal
We show that external bias significantly affects the photoluminescence (PL) in CdTe photovoltaics. The main observations are: (1) reverse bias suppresses PL, (2) PL increases with moderate forward bias and tends to saturate when it is above the open-circuit voltage, and (3) PL in the region of saturation is extremely sensitive to device degradation. We attribute the observed phenomena to the competition between the field-induced separation of electrons and holes and their nonradiative recombination. We have developed a model that describes bias-dependent PL more quantitatively and forms a basis for using it as an indicator of device degradation. © 2002 American Institute of Physics.


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