TITLE

Effects of sulfur passivation on Ti/Al ohmic contacts to n-type GaN using CH[sub 3]CSNH[sub 2] solution

AUTHOR(S)
Song, June O; Park, Seong-Ju; Seong, Tae-Yeon
PUB. DATE
April 2002
SOURCE
Applied Physics Letters;4/29/2002, Vol. 80 Issue 17, p3129
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We investigate the effect of CH[sub 3]CSNH[sub 2] solution treatment on Ti/Al ohmic contacts to n-GaN:Si (3×10[sup 18] cm[sup -3]). It is shown that the sulfide treatment results in a drastic increase in the photoluminescence intensity, compared with that of the untreated sample. Current-voltage (I–V) results show that the sulfide treatment significantly improves the specific contact resistance. The annealing of the sulfide-treated sample (at 700 °C) results in a specific contact resistance of 3.1×10[sup -6] Ω cm[sup 2]. X-ray photoemission spectroscopy (XPS) results show that the Ga 2p core levels shift toward the higher-binding energy side by 0.2 eV for the sulfide-treated sample and by 0.4 eV for the annealed (sulfide-treated) sample, compared with that of the untreated one. It is further shown that the intensity of O 1s core level decreases with the sulfide treatment. Based on the I–V and XPS results, the sulfide and annealing treatment dependence of the specific contact resistance is discussed. © 2002 American Institute of Physics.
ACCESSION #
6540274

 

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