TITLE

Zero-field spin splitting in In[sub 0.52]Al[sub 0.48]As/In[sub x]Ga[sub 1-x]As metamorphic high-electron-mobility-transistor structures on GaAs substrates using Shubnikov–de Haas measurements

AUTHOR(S)
Cui, L. J.; Zeng, Y. P.; Wang, B. Q.; Zhu, Z. P.; Lin, L. Y.; Jiang, C. P.; Guo, S. L.; Chu, J. H.
PUB. DATE
April 2002
SOURCE
Applied Physics Letters;4/29/2002, Vol. 80 Issue 17, p3132
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Shubnikov–de Haas measurements were carried out for In[sub 0.52]Al[sub 0.48]As/In[sub x]Ga[sub 1-x]As metamorphic high-electron-mobility-transistor structures grown on GaAs substrates with different indium contents and/or different Si δ-doping concentrations. Zero-field (B→0) spin splitting was found in samples with stronger conduction band bending in the InGaAs well. It was shown that the dominant spin splitting mechanism is attributed to the contribution by the Rashba term. We found that zero-field spin splitting not only occurs in the ground electron subband, but also in the first excited electron subband for a sample with Si δ-doping concentration of 6×10[sup 12] cm[sup -2]. We propose that this In[sub 0.52]Al[sub 0.48]As/In[sub x]Ga[sub 1-x]As metamorphic high-electron-mobility-transistor structure grown on GaAs may be a promising candidate spin-polarized field-effect transistors. © 2002 American Institute of Physics.
ACCESSION #
6540273

 

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