TITLE

Determination of the optimal cation composition of ferroelectric (Zn[sub x]Cd[sub 1-x])S thin films for applications to silicon-based nonvolatile memories

AUTHOR(S)
Hotta, Y.; Rokuta, E.; Jhoi, J.-H.; Tabata, H.; Kobayashi, H.; Kawai, T.
PUB. DATE
April 2002
SOURCE
Applied Physics Letters;4/29/2002, Vol. 80 Issue 17, p3180
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Thin films of ferroelectric binary mixed II–VI compounds such as (Zn[sub x]Cd[sub 1-x])S, as well as (Zn[sub y]Cd[sub 1-y])Te and (Zn[sub z]Cd[sub 1-z])Se (0≤x,y,z≤1), were examined from the standpoint of the application to Si-based nonvolatile memories. Electronic-band discontinuities at the ferroelectric–Si interface decreased significantly with increase in the atomic number of the constituent chalcogenide atoms, which favored (Zn[sub x]Cd[sub 1-x])S as the most potential gate ferroelectrics among the three compounds. Polarization-field (P–E) characteristics of the (Zn[sub x]Cd[sub 1-x])S films were found to largely depend on the cation composition. No hysteretic behaviors in the P–E curves were observed for high-Zn concentrations above x=0.5, while the P–E curves traced hysteretic loops due to the ferroelectricity for x<0.5. The remnant polarization was greatly dependent on the Zn concentration, and yielded a maximum of 0.03 μC/cm[sup 2] for x=0.3. On the other hand, the coercive field was not composition dependent, and was approximately 12 kV/cm. © 2002 American Institute of Physics.
ACCESSION #
6540257

 

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