Three-terminal gated magnetoelectronic device

Zelakiewicz, S.; Johnson, Mark
April 2002
Applied Physics Letters;4/29/2002, Vol. 80 Issue 17, p3204
Academic Journal
In a Hybrid Hall device, magnetic fringe fields from the edge of a single, patterned ferromagnetic film generate a Hall voltage in a two-dimensional electron gas. By adding an electrostatic gate to this passive device and applying an electric field, we demonstrate the reduction of the carrier density by 50% and the consequent enhancement of the bistable output levels by 100%. This modulation of magnetoelectronic characteristics by using a gate voltage shows the possibility of creating an active spintronic device. The gated Hybrid Hall device may also be used as a nonvolatile memory cell with the unique attribute that isolation and storage are provided by a single device.


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