Gate leakage effects and breakdown voltage in metalorganic vapor phase epitaxy AlGaN/GaN heterostructure field-effect transistors

Tan, W. S.; Houston, P. A.; Parbrook, P. J.; Wood, D. A.; Hill, G.; Whitehouse, C. R.
April 2002
Applied Physics Letters;4/29/2002, Vol. 80 Issue 17, p3207
Academic Journal
The gate leakage behavior in AlGaN/GaN heterostructure field-effect transistors was studied as a function of applied bias, temperature, and surface periphery. A surface hopping conduction mechanism with an activation energy of 0.21 eV is proposed for the gate–drain leakage for voltages that exceed pinchoff. The reverse breakdown voltage of the device exhibited a negative temperature coefficient of -0.11 V K-1, suggesting that a breakdown mechanism other than impact ionization, such as thermal runaway, may be responsible. © 2002 American Institute of Physics.


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