Quantitative analysis of one-dimensional dopant profile by electron holography

McCartney, M. R.; Gribelyuk, M. A.; Li, Jing; Ronsheim, P.; McMurray, J. S.; Smith, David J.
April 2002
Applied Physics Letters;4/29/2002, Vol. 80 Issue 17, p3213
Academic Journal
The one-dimensional dopant profile of a silicon p–n junction was characterized using off-axis electron holography in a transmission electron microscope (TEM). Quantitative comparisons were made with simulated voltage profiles based on data obtained from secondary-ion mass spectroscopy. Close agreement was obtained over a range of sample thicknesses, and a spatial resolution of 5 nm and sensitivity of 0.1 V were established. By using a sample that had been wedge polished and briefly ion milled, depleted surface layers did not need to be taken into account, and beam-induced charging was removed by carbon coating one exposed surface of the TEM specimen. © 2002 American Institute of Physics.


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