Using the Hall effect to measure interface trap densities in silicon carbide and silicon metal-oxide-semiconductor devices

Saks, N. S.; Ancona, M. G.; Rendell, R. W.
April 2002
Applied Physics Letters;4/29/2002, Vol. 80 Issue 17, p3219
Academic Journal
A technique is presented for measuring the density of interface traps versus energy D[sub IT](E) using the Hall effect in metal-oxide-semiconductor samples. Good agreement is obtained between this Hall approach and standard C–V techniques in both SiC and silicon test devices. D[sub IT](E) is found to be much higher in 4H–SiC compared to 6H devices oxidized at the same time. D[sub IT](E) in both SiC poly types increases exponentially with energy approaching the conduction bandedge. © 2002 American Institute of Physics.


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