Control of the π plasmon in a single layer graphene by charge doping

Shin, S. Y.; Kim, N. D.; Kim, J. G.; Kim, K. S.; Noh, D. Y.; Kim, Kwang S.; Chung, J. W.
August 2011
Applied Physics Letters;8/22/2011, Vol. 99 Issue 8, p082110
Academic Journal
We report that the behavior of a low-energy π plasmon excitation in a single layer graphene (SLG) can be modified by doping external potassium (K) atoms, a feature demanded to realize the graphene plasmonics. Using high-resolution electron-energy-loss spectroscopy, we find that upon K-doping the π plasmon energy increases by 1.1 eV due to the K-induced electron density up to n = 7 × 1013 cm-2 in SLG. The four modified dispersions for different K-dopings, however, are found to merge into a single universal curve when plotted in the dimensionless coordinates indicating that the unique plasmonic character of SLG is preserved despite the K-dopings.


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