TITLE

White electroluminescence from hydrogenated amorphous-SiN[sub x] thin films

AUTHOR(S)
Pei, Zingway; Chang, Y. R.; Hwang, H. L.
PUB. DATE
April 2002
SOURCE
Applied Physics Letters;4/22/2002, Vol. 80 Issue 16, p2839
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
White electroluminescence (EL) was observed from hydrogenated amorphous-SiN[sub x]-based light-emitting device. Silicon nitride thin films were deposited on the indium-tin-oxide (ITO)-coated glass substrate by plasma enhanced chemical vapor deposition method with a mixture of Ar-diluted 5% SiH[sub 4] and pure N[sub 2] gases, in the ratio 2 to 1. Measured x value of the film is 0.56, and the corresponding photoluminescence of a-SiN[sub 0.56]:H thin film exhibited a red-infrared spectrum, centered at 630 nm. The layer structure of the EL device is ITO/a-SiN[sub 0.56]:H (80 nm)/Al, with light emitting from the ITO layer, recognizable by the naked eye in the dark, under the 14 V forward bias conditions. White EL spectra from ∼400 to 750 nm, with a central peak at 560 nm, were observed in the hydrogenated amorphous silicon nitride EL device. A carrier transport mechanism was suggested, and the EL was attributed to the recombination of carriers through the luminescent states. © 2002 American Institute of Physics.
ACCESSION #
6494801

 

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