White electroluminescence from hydrogenated amorphous-SiN[sub x] thin films

Pei, Zingway; Chang, Y. R.; Hwang, H. L.
April 2002
Applied Physics Letters;4/22/2002, Vol. 80 Issue 16, p2839
Academic Journal
White electroluminescence (EL) was observed from hydrogenated amorphous-SiN[sub x]-based light-emitting device. Silicon nitride thin films were deposited on the indium-tin-oxide (ITO)-coated glass substrate by plasma enhanced chemical vapor deposition method with a mixture of Ar-diluted 5% SiH[sub 4] and pure N[sub 2] gases, in the ratio 2 to 1. Measured x value of the film is 0.56, and the corresponding photoluminescence of a-SiN[sub 0.56]:H thin film exhibited a red-infrared spectrum, centered at 630 nm. The layer structure of the EL device is ITO/a-SiN[sub 0.56]:H (80 nm)/Al, with light emitting from the ITO layer, recognizable by the naked eye in the dark, under the 14 V forward bias conditions. White EL spectra from ∼400 to 750 nm, with a central peak at 560 nm, were observed in the hydrogenated amorphous silicon nitride EL device. A carrier transport mechanism was suggested, and the EL was attributed to the recombination of carriers through the luminescent states. © 2002 American Institute of Physics.


Related Articles

  • Electronic transport in thin film electroluminescence of SrS:Ce. Chunxiang Xu; Yiping Cui; Xurong Xu // Journal of Applied Physics;10/15/2000, Vol. 88 Issue 8, p4623 

    Focuses on the fabrication of thin film electroluminescent devices based on the scheme of SiO[sub 2]/SrS:Ce/SiO. Observation of blue-green emission in the devices; Effect of the mixing interaction between the conduction band of SrS and the excited state of Ce[sup 3+] on the electronic transport...

  • Optoelectrical properties of four amorphous silicon thin-film transistors 200 dpi active-matrix organic polymer light-emitting display. Yongtaek Hong; Jeong-Yeop Nahm, Y.; Kanick, Jerzy // Applied Physics Letters;10/20/2003, Vol. 83 Issue 16, p3233 

    We report on opto-electrical properties of a current-driven 200 dpi active-matrix organic polymer red light-emitting display (AM–PLED) based on four hydrogenated amorphous silicon thin-film transistor pixel electrode circuits. The AM–PLED luminance and effective light-emission...

  • Voltage-controlled electroluminescence from SiO[sub 2] films containing Ge nanocrystals and its mechanism. Zhang, J.-Y.; Ye, Y.-H.; Tan, X.-L.; Bao, X.-M. // Applied Physics A: Materials Science & Processing;2000, Vol. 71 Issue 3, p299 

    Abstract. Luminescent SiO[sub 2] films containing Ge nanocrystals are fabricated by using Ge ion implantation, and metaloxide-semiconductor structures employing these films as the active layers show yellow electroluminescence (EL) under both forward and reverse biases. The EL spectra are...

  • Stable electroluminescence of nanocrystalline silicon device activated by high pressure water vapor annealing. Gelloz, B.; Shibata, T.; Koshida, N. // Applied Physics Letters;11/6/2006, Vol. 89 Issue 19, p191103 

    Electroluminescence (EL) and electrical properties of nanocrystalline porous silicon (PS) diodes have been sufficiently improved by introducing high pressure water vapor annealing into the active PS layer. The EL emission is significantly enhanced without affecting the operating voltage. In...

  • Conductivity and Structure of Er-Doped Amorphous Hydrogenated Silicon Films. Kon�kov, O. I.; Terukov, E. I.; Granitsina, L. S. // Semiconductors;Nov2002, Vol. 36 Issue 11, p1248 

    A columnar structure of a-Si:H(Er) film serving as a working layer in electroluminescent structures has been demonstrated. The diameter of columns is in the range of 60-100 �. In a structure of this kind, the conductivity depends on the direction of current. In the planar configuration,...

  • Optical amplification and electroluminescence at 1.54 μm in Er-doped zinc silicate germanate on silicon. Baker, C.C.; Heikenfeld, J.; Yu, Z.; Steckl, A.J. // Applied Physics Letters;3/1/2004, Vol. 84 Issue 9, p1462 

    Optical amplification and electroluminescence at 1.5 μm is reported in Er-doped Zn[sub 2]Si[sub 0.5]Ge[sub 0.5]O[sub 4] (ZSG:Er) on silicon. ZSG:Er films were deposited by rf sputtering from a composite target in Ar/O[sub 2] mixtures. Channel waveguides were fabricated by plasma etching with...

  • Electroluminescence of SnO2/p-Si heterojunction. Zhizhong Yuan; Dongsheng Li; Minghua Wang; Peiliang Chen; Daoren Gong; Peihong Cheng; Deren Yang // Applied Physics Letters;3/24/2008, Vol. 92 Issue 12, p121908 

    Polycrystalline SnO2 film of tetragonal rutile structure with an optical band gap of 3.9 eV was formed by oxidation process at 1000 °C on electron beam evaporation deposited Sn film. Room temperature electroluminescence from the SnO2/p-Si heterojunction was observed at 590 nm when the device...

  • Photoresponsivity enhancement of ZnO/Si photodiodes through use of an ultrathin oxide interlayer. L.-C. Chen; C.-N. Pan // European Physical Journal - Applied Physics;Oct2008, Vol. 44 Issue 1, p43 

    Photodiodes with a p-ZnO/oxide/n-Si substrate structure were fabricated. The N-In codoped p-type ZnO films were deposited by ultrasonic spray pyrolysis on a (111)-oriented silicon substrate with a thin oxide layer. A photocurrent of ~?4.99 ? 10-5A was measured at a reverse bias of 1 V, and a...

  • Blue emission from CaS:Cu,F thin-film electroluminescent device fabricated on Si substrate. Hakamata, Shintaro; Ehara, Mami; Fukada, Haruki; Kominami, Hiroko; Nakanishi, Yoichiro; Hatanaka, Yoshinori // Applied Physics Letters;10/25/2004, Vol. 85 Issue 17, p3729 

    Thin-film electroluminescent (TFEL) devices were fabricated on Si substrates by using SiO2 and Y2O3 films as insulator layers, and ZnS films as buffer layers. The device annealed at 850 °C for 10 min in Ar showed a purple EL with a peak at 425 nm. Commission Internationale de...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics