TITLE

Nitrogen-doped GaAsP light-emitting diodes with junctions grown by hydride vapor-phase epitaxy

AUTHOR(S)
Sato, Tadashige; Imai, Megumi
PUB. DATE
April 2002
SOURCE
Applied Physics Letters;4/22/2002, Vol. 80 Issue 16, p2875
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Nitrogen-doped GaAsP light-emitting diodes (LEDs) with grown junctions have been fabricated on GaP substrates using hydride vapor-phase epitaxy. A p[sup +]/p-layer structure was employed to reduce light absorption and to optimize the carrier concentration at the junction. The carrier concentration in the p layer of the structure plays the important role of improvement of the luminous intensity, and is optimized at 3×10[sup 17] cm[sup -3]. The LEDs were 20% brighter than those commercially available with diffused junctions. Reliability studies showed good stability through 168 h of operation, enough to suggest they could be used as commercial products. © 2002 American Institute of Physics.
ACCESSION #
6494789

 

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