Creation and suppression of point defects through a kick-out substitution process of Fe in InP

Zhao, Y. W.; Dong, H. W.; Chen, Y. H.; Zhang, Y. H.; Jiao, J. H.; Zhao, J. Q.; Lin, L. Y.; Fung, S.
April 2002
Applied Physics Letters;4/22/2002, Vol. 80 Issue 16, p2878
Academic Journal
Indium antisite defect In[sub P]-related photoluminescence has been observed in Fe-diffused semi-insulating (SI) InP. Compared to annealed undoped or Fe-predoped SI InP, there are fewer defects in SI InP obtained by long-duration, high-temperature Fe diffusion. The suppression of the formation of point defects in Fe-diffused SI InP can be explained in terms of the complete occupation by Fe at indium vacancy. The In[sub P] defect is enhanced by the indium interstitial that is caused by the kick out of In and the substitution at the indium site of Fe in the diffusion process. Through these Fe-diffusion results, the nature of the defects in annealed undoped SI InP is better understood. © 2002 American Institute of Physics.


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