Surface segregation of bulk oxygen on oxidation of epitaxially grown Nb-doped SrTiO[sub 3] on SrTiO[sub 3](001)

Chen, Fan; Zhao, Tong; Fei, Y. Y.; Lu, Huibin; Chen, Zhenghao; Yang, Guozhen; Zhu, X. D.
April 2002
Applied Physics Letters;4/22/2002, Vol. 80 Issue 16, p2889
Academic Journal
We studied the epitaxy of 10 mol % Nb:SrTiO[sub 3] on a SrTiO[sub 3](100) substrate under an interrupted pulsed-laser-deposition condition. By monitoring the recovery behaviors of reflection high-energy electron diffraction intensity and an optical reflectance difference signal from the growth surface, we observed that, at temperatures above 630 °C, the oxidation of an as-deposited Nb:SrTiO[sub 3] monolayer was achieved by the diffusion of oxygen vacancies in the monolayer into the substrate. © 2002 American Institute of Physics.


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