Noncontact potentiometry of polymer field-effect transistors

Bu¨rgi, L.; Sirringhaus, H.; Friend, R. H.
April 2002
Applied Physics Letters;4/22/2002, Vol. 80 Issue 16, p2913
Academic Journal
We report on high-resolution potentiometry of operating organic thin-film field-effect transistors by means of scanning Kelvin probe force microscopy. It is demonstrated that the measured potential reflects the electrostatic potential of the accumulation layer at the semiconductor/insulator interface. We present data revealing gate bias and lateral electric field dependence of the field-effect mobility in poly(hexylthiophene) at temperatures from 50 to 300 K. © 2002 American Institute of Physics.


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